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PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ Tc = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector CurrentA Clamped Inductive Load current
Max.
600 40 20 160 160 10 40 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfyin (1.1Nym)
Units
V A
Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 screw
V W
C
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS RJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
0.77 2.5 --- 40 ---
Units
C/W
g (oz.)
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1
07/31/03
IRG4PH40UD2
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units
-- 0.63 1.72 2.15 1.7 -- -13 18 -- -- -- 3.4 3.3 --
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- -- VCE(on) Collector-to-Emitter Saturation Voltage -- -- VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Threshold Voltage temp. coefficient -- 11 gfe Forward Transconductance -- ICES Zero Gate Voltage Collector Current -- -- VFM Diode Forward Voltage Drop -- -- IGES Gate-to-Emitter Leakage Current --
g
-- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1mA (25C-150C) IC = 20A, VGE = 15V, TJ = 25C 2.1 V IC = 40A, VGE = 15V, TJ = 125C -- IC = 20A, VGE = 15V, TJ = 150C -- VCE = VGE, IC = 250A 6.0 -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 20A VGE = 0V, VCE = 600V 250 2.0 A VGE = 0V, VCE = 10V, TJ = 25C VGE = 0V, VCE = 600V, TJ = 150C 2500 3.8 V IF = 10A, VGE = 0V IF = 10A, VGE = 0V, TJ = 150C 3.7 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf ETS LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 110 18 36 23 27 100 280 1440 1410 2850 22 32 190 630 5360 13 2100 99 12 50 72 4.4 5.9 130 250 210 180 130 24 53 -- -- 110 340 -- -- 3740 -- -- -- -- -- -- -- -- -- 76 110 7.0 8.8 200 380 -- -- nC
Conditions
IC = 20A VCC = 400V VGE = 15V IC = 20A, VCC = 600V VGE = 15V, RG = 10 TJ = 25C Energy losses inclued "tail" IC = 20A, VCC = 600V VGE = 15V, RG = 10 TJ = 25C IC = 20A, VCC = 600V VGE = 15V, RG = 10, L = 1.0mH TJ = 150C Energy losses inclued "tail" Measured 5mm froom package VGE = 0V VCC = 30V f = 1.0MHz
TJ=25C, VCC = 200V, IF = 10A, di/dt = 200A/s TJ=125C, VCC = 200V, IF = 10A, di/dt = 200A/s
ns
J
ns
J nH pF ns A nC
TJ=25C, VCC = 200V, IF = 10A, di/dt = 200A/s TJ=125C, VCC = 200V, IF = 10A, di/dt = 200A/s TJ=25C, VCC = 200V, IF = 10A, di/dt = 200A/s TJ=125C, VCC = 200V, IF = 10A, di/dt = 200A/s
A/s TJ=25C, VCC = 200V, IF = 10A, di/dt = 200A/s
TJ=125C, VCC = 200V, IF = 10A, di/dt = 200A/s
2
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IRG4PH40UD2
50 45 40
Square wave: 60% of rated voltage
I
Load Current ( A )
35 30 25 20 15 10 5 0 0.1 1 10
Ideal diodes
For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 35W
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 25C TJ = 150C
100
TJ = 150C
TJ = 25C
10
10
1 0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 4 6 8
VCC = 10V 5s PULSE WIDTH A
10 12
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PH40UD2
40
V GE = 15V
2.5
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V 80s PULSE WIDTH I C = 40A
30
2.0
20
IC = 20A
1.5
10
I C = 10A
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TJ , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10 0.05 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + T C
P DM
t
0.02 0.01
1 t2
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH40UD2
4000 3500 3000 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc
14.0 IC= 20A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
VCC = 400V
Capacitance (pF)
2500 2000 1500
Cies
Coes
1000 500 0 1 10
Cres
0
20
40
60
80
100
120
VCE, Collector-toEmitter-Voltage(V)
QG Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3500 VCE = 600V VGE = 15V
11000 10000 R G = 10A VGE = 15V
Total Swiching Losses (mJ)
3250
Total Swiching Losses (mJ)
TJ = 25C I C = 20A
9000 8000 7000 6000 5000 4000 3000 2000 1000
IC = 40A
3000
IC = 20A
2750
IC = 10A
-55 -5 45 95 145
2500 0 10 20 30 40 50
0
RG, Gate Resistance ()
T J, Juntion Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PH40UD2
7000 R G = 10 6000 TJ = 150C VCE= 600V VGE = 15V
1000
VGE = 20V GE TJ = 125C
5000 4000 3000 2000 1000 0 0
I C , Collector-to-Emitter Current (A)
Total Swiching Losses (mJ)
100
SAFE OPERATING AREA
10
10
20
30
40
1 1 10 100 1000
IC, Collecto-to-Emitter (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PH40UD2
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4PH40UD2
90% Vge
Same type device as D.U.T.
+Vge
Vce
80% of Vce
430F D.U.T.
Ic
10% Vce Ic
90% Ic
5% Ic td(off) tf
Eoff =
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18a - Test Circuit for Measurement of
Vce Ic dt
t1+5S Vce ic dt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
Ic dt
trr id dt tx Vcc
tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr
Vpk Irr
Vcc
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd idIc dt Vd dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4PH40UD2
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
18 . Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL= 0 - 800V
800V 4 X IC @25C
19. Clamped Inductive Load Test Circuit
20. Pulsed Collector Current Test Circuit
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IRG4PH40UD2
15.90 (.626) 15.30 (.602) -B-
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
LEAD ASSIGNMENTS 1234GATE DRAIN SOURCE DRAIN
-D-
5.30 (.209) 4.70 (.185)
2.50 (.089) 1.50 (.059) 4
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
TO-247AC Part Marking Information
Notes : This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBL Y LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS SEMBLY LINE "H" PART NUMBER
IRFPE30
56 035H 57
Notes : This part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB.
EXAMPLE: THIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 3A1Q
INTERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
INT ERNAT IONAL RECT IFIER LOGO AS S E MBLY LOT CODE
PART NUMBER
IRFPE30
3A1Q
9302
DAT E CODE (YYWW) YY = YEAR WW = WEEK
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 10 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/03
10
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